TriQuint GaN Success Leads to Phase 3 DARPA R&D Contract

TriQuint Semiconductor has been awarded leadership of an Army Research Laboratory (ARL) Gallium Nitride (GaN) R&D contract. Funded through DARPA, the program is designed to produce advanced, high-efficiency wideband amplifiers for a variety of defense applications. Leadership of the Phase III program was based on successes and benchmarks established in Phase II. The 2-year program, valued at $16.5 Million, includes extending operational lifetimes of 48V GaN devices and a MMIC development phase. (Photo: Business Wire)