TriQuint Semiconductor’s New HV-HBT
Transistors Can Lower Costs of 3G/4G Mobile Infrastructure
New 2-Stage HBT Products Provide
Complete RF Solution When Paired With TriQuint’s
High Power HV-HBT Family
HILLSBORO, Ore. & ATLANTA (Business Wire EON) June 25, 2008 --
TriQuint Semiconductor (Nasdaq:TQNT), a leading RF semiconductor
manufacturer and foundry services provider, today announced the release
of two new HV-HBT (high voltage-heterojunction bipolar transistor)
devices created at TriQuint’s San Jose, CA
design center, formerly WJ Communications1. The
highly efficient, highly linear devices expand TriQuint’s
HV-HBT portfolio, and when paired with TriQuint’s
high power HBT devices, provide a complete RF solution for 3G/4G high
power amplifier (HPA) mobile infrastructure designs. Greater amplifier
efficiency can enable lower initial base station costs, lower power
consumption and lower operating costs.
“An important customer advantage of the recent
WJ Communications acquisition is the ability of the companies’
portfolios to complement each other,” remarked
TriQuint Product Marketing Director, Dan Green. “WJ’s
device line-up complements our base station portfolio very well. WJ’s
expertise in InGaP HBT technology and the new devices’
excellent linearity, paired with TriQuint’s
high power, highly efficient and highly linear HBT devices offer a
complete RF transistor solution.”
The role of highly efficient, highly linear RF transistors in base
station amplifier design is critical to enabling network operators’
plans for meeting 3G/4G service demands, Mr. Green noted.
“GSM system amplifiers (2G) don’t
require linear operation, and their efficiencies were much higher
because of this fact. But next-generation 3G/4G systems demand linearity
and efficiency, so technology that was well-suited to older network
systems suffered a setback when deployed in WCDMA or other
next-generation platforms. Consequently, early 3G network operators saw
dramatic increases in operational expenses (OpEx) due to the loss of
efficiency, so they sought solutions. The more highly efficient and
linear nature of HV-HBT products from TriQuint provide the right
solution at the right time,” said Mr. Green.
A typical RF section in a base station radio is made up of three areas
known as the pre-driver, driver and output stages. The relatively low
power HBT devices released today by TriQuint are ideally suited as
pre-drivers and drivers. TriQuint released its first generation of high
power HV-HBT devices in October of 2007. These products serve the driver
and output stages and provide exceptionally high efficiency and
linearity. When paired with devices like TriQuint’s
new AP631 and AP632 a complete RF solution is achieved.
“Efficiency at the driver and output stages
is especially critical since these components have the greatest impact
on minimizing electrical consumption, and play a significant role in
reducing the waste heat generated in the RF section of an amplifier,”
explained Mr. Green. “Because our high power
HV-HBT devices are so efficient, they generate about half the waste heat
of competing technology in WCDMA systems. Cutting waste heat in half
reduces electricity used by cooling systems and also shrinks carbon
footprints for network systems operators focused on reducing global
warming.”
The release of TriQuint’s new HBT devices
comes at a time of continued growth for highly linear RF transistors in
the base station networks market. According to EJL Wireless Research2,
the growth in demand for 3G and 4G base stations will result in a higher
number of transceiver and therefore power amplifier shipments in the
next several years. This research suggests that the 2008-2011 compound
annual growth rate (CAGR) for high linearity transceivers will be
approximately 35.25%. These systems require highly linear amplifiers,
and TriQuint’s HV-HBT devices provide this
needed linearity with unprecedented levels of efficiency.
The new HV-HBT devices released today at the IEEE IMS MTT-S Convention
and Exhibition in Atlanta, GA (USA), integrate two stages into a single
package. This allows designers to reduce the number of discrete
amplifier components in a system. When used in a typical base station
HPA design, a 25% cost reduction and a PCB area savings of 12 square
centimeters can be achieved compared to designs using two separate
discrete amplifier stages.
The new amplifiers’ high linearity minimizes
additional signal distortion for repeater applications when used in
final amplifier stages, and reduces backoff power requirements to
minimize distortion from high PAR (peak to average ratio) signals in
3G/4G mobile base stations. This translates into reduced overall system
costs and improved efficiency, which can lower HPA power consumption and
improve OpEx (operational expenditures) for multi-carrier 3G mobile
infrastructures.
Samples of TriQuint’s new high dynamic range
2-stage 28V HBT amplifiers, AP631 (4W) and AP632 (7W), will be available
in July 2008 through TriQuint’s global sales
and distribution channels. Contact TriQuint Product Marketing at: tuan.nguyen@tqs.com
/ +1-408-577-6318 or visit www.triquint.com
for details.
For a detailed list of TriQuint RF products including gallium arsenide
(GaAs) power amplifiers and transistors, LDMOS RF transistors, surface
acoustic wave (SAW) and bulk acoustic wave (BAW) filters for
wide-ranging telecommunications applications, visit www.triquint.com.
Register for new product details and to receive our newsletter at www.triquint.com/rf.
1 TriQuint completed its acquisition of WJ
Communications on May 22, 2008.
2 ©2008 EJL Wireless
Research, 4th Edition: “Global
BTS Transceiver Market Analysis and Forecast, 2007-2012”,
April 2008.
FORWARD LOOKING STATEMENTS
This TriQuint Semiconductor, Inc. (Nasdaq:TQNT) press release contains
forward-looking statements made pursuant to the Safe Harbor provisions
of the Private Securities Litigation Reform Act of 1995. Readers are
cautioned that forward-looking statements involve risks and
uncertainties. The cautionary statements made in this press release
should be read as being applicable to all related statements wherever
they appear. Statements containing such words as ‘leading’,
‘exceptional’, ‘high
efficiency’, ‘adding
value’, ‘leading
supplier’, or similar terms are considered to
contain uncertainty and are forward-looking statements. A number of
factors affect TriQuint’s operating results
and could cause its actual future results to differ materially from any
results indicated in this press release or in any other forward-looking
statements made by, or on behalf of, TriQuint including, but not limited
to: those associated with the unpredictability and volatility of
customer acceptance of and demand for our products and technologies, the
ability of our production facilities and those of our vendors to meet
demand, the ability of our production facilities and those of our
vendors to produce products with yields sufficient to maintain
profitability, as well as the other “Risk
Factors” set forth in TriQuint’s
most recent 10-Q report filed with the Securities and Exchange
Commission. This and other reports can be found on the SEC web site, www.sec.gov.
A reader of this release should understand that these and other risks
could cause actual results to differ materially from expectations
expressed / implied in forward-looking statements.
FACTS ABOUT TRIQUINT
Founded in 1985, we “Connect the Digital
World to the Global Network”™
by supplying high-performance RF modules, components and foundry
services to the world's leading communications companies. Specifically,
TriQuint supplies products to four out of the top five cellular handset
manufacturers, and is a leading gallium arsenide (GaAs) supplier to
major defense and space contractors. TriQuint creates standard and
custom products using advanced processes that include gallium arsenide,
surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies to
serve diverse markets including wireless handsets, base stations,
broadband communications and military. TriQuint is also lead researcher
in a 3-year DARPA program to develop advanced gallium nitride (GaN)
amplifiers. TriQuint, as named by Strategy Analytics in August 2007, is
the number-three worldwide leader in GaAs devices and the world’s
largest commercial GaAs foundry. TriQuint has ISO9001 certified
manufacturing facilities in Oregon, Texas, and Florida and a production
plant in Costa Rica; design centers are located in North America and
Germany. Visit TriQuint at www.triquint.com/rf
to register for our newsletters.
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